mmbt3904lp document number: ds31835 rev. 3 - 2 1 of 5 www.diodes.com february 2011 ? diodes incorporated mmbt3904lp 40v npn surface mount transistor features ? complementary pnp type available (mmbt3906lp) ? ultra-small leadless surface mount package ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0008 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel mmbt3904lp-7 1n 7 8mm 3,000 MMBT3904LP-7B 1n 7 8mm 10,000 notes: 1. no purposefully added lead. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information 1n = product type marking code top view device schematic bottom view dfn1006-3 device symbol c e b c e b mmbt3904lp-7 MMBT3904LP-7B top view bar denotes base and emitter side top view dot denotes collector side 1n 1n
mmbt3904lp document number: ds31835 rev. 3 - 2 2 of 5 www.diodes.com february 2011 ? diodes incorporated mmbt3904lp maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 4) i c 200 ma thermal characteristics characteristic symbol value unit power dissipation (note 4) p d 250 mw thermal resistance, junction to ambient (note 4) r ja 500 c/w operating and storage and temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 pcb pad layout as shown on diodes, inc. suggested pad layout ap02001, which can be found on o ur website at http://www.diodes.com 1e-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 fig. 1 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 500c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0.9 d = 0.1 d = single pulse 1e-06 0.0001 0.01 1 100 10,000 fig. 2 single pulse maximum power dissipation t , pulse duration time (s) 1 1 10 100 1,000 p (pk), p eak t r ansien t p o we r (w) 0.1 single pulse t - t = p * r (t) ja ja r (t) = r(t) * ja r r = 500c/w ja ja 0 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 t , ambient temperature ( c) a fig. 3 power dissipation vs. ambient temperature p , p o we r dissi p a t i o n (w) d note 4
mmbt3904lp document number: ds31835 rev. 3 - 2 3 of 5 www.diodes.com february 2011 ? diodes incorporated mmbt3904lp electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics collector-base breakdown voltage bv cbo 60 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage (note 5) bv ceo 40 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage bv ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cex ? 50 na v ce = 30v, v eb ( off ) = 3.0v base cutoff current i bl ? 50 na v ce = 30v, v eb ( off ) = 3.0v on characteristics (note 5) dc current gain h fe 40 70 100 60 30 ? ? 300 ? ? ? i c = 100a, v ce = 1.0v i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 50ma, v ce = 1.0v i c = 100ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.20 0.30 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 0.65 ? 0.85 0.95 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 8.5 pf v eb = 0.5v, f = 1.0mhz, i c = 0 input impedance h ie 1.0 10 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.5 8.0 x 10 -4 small signal current gain h fe 100 400 ? output admittance h oe 1.0 40 s current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 10ma, f = 100mhz switching characteristics delay time t d ? 35 ns v cc = 3.0v, i c = 10ma, v be(off) = - 0.5v, i b1 = 1.0ma rise time t r ? 35 ns storage time t s ? 200 ns v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma fall time t f ? 50 ns notes: 5. short duration pulse test used to minimize self-heating effect. 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 01 2 3 45 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i, c o lle c t o r c u r r e n t (a) c i = 2ma b i = 0.2ma b i = 0.4ma b i = 0.6ma b i = 0.8ma b i = 1.6ma b i = 1.4ma b i = 1.2ma b i = 1.8ma b i = 1ma b 0.1 1 10 100 1,000 i , collector current (ma) c fig. 5 typical dc current gain vs. collector current 0 100 200 300 400 h, d c c u r r e n t g ai n fe t = -55c a t = 25c a t = 150c a t = 125c a t = 85c a v = 1v ce
mmbt3904lp document number: ds31835 rev. 3 - 2 4 of 5 www.diodes.com february 2011 ? diodes incorporated mmbt3904lp 0.1 1 10 100 1,000 i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 10 cb t = 25c a t = 125c a t = 150c a t = 85c a 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) 0.1 1 10 100 1,000 i , collector current (ma) c fig. 7 typical collector-emitter saturation voltage vs. collector current i/i = 20 cb t = -55c a t = 25c a t = 150c a t = 85c a t = 125c a 0.1 1 10 100 1,000 i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) v = 5v ce t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a 0.1 1 10 100 1,000 i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1. 2 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 85c a t = 25c a t = -55c a t = 125c a t = 150c a gain = 10 package outline dimensions dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm l2 a1 e b2 l1 l3 d e b1 a
mmbt3904lp document number: ds31835 rev. 3 - 2 5 of 5 www.diodes.com february 2011 ? diodes incorporated mmbt3904lp suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 y c g1 g2 x x 1 z
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